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cond-mat.mtrl-sci2024
Growth Conditions and Interfacial Misfit Array in SnTe (111) films Grown on InP (111)A Substrates by Molecular Beam Epitaxy
Qihua Zhang, Maria Hilse, Wesley Auker +2
Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its…
cond-mat.mtrl-sci2024
Mixed polytype/polymorph formation and its effects on the electronic properties in InSe films grown by molecular beam epitaxy on GaAs(111)B
Maria Hilse, Justin Rodriguez, Jennifer Gray +7
The top-down synthesis of inherently ferroelectric semiconductors and their integration with traditional material platforms have the potential to enable new low power logic devices…