4 papers
Significant impact of Al1-xGaxN interlayer on GaN/AlN thermal boundary conductance
Khalid Zobaid Adnan, Hao Zhou, Tianli Feng
AlN-GaN heterostructures are central to high-power and high-frequency electronics, including RF devices, power converters, and AI accelerators. An intermediate Al1-xGaxN (AlGaN) la…
Bridging Finite Element and Molecular Dynamics for Non-Fourier Thermal Transport Near Nanoscale Hot Spot
Tanvirul Abedien, Tianli Feng
Nanoscale hot spots forming tens of nanometers beneath the gate in advanced FinFET and HEMT devices drive heat transport into a non-Fourier regime, challenging conventional (Fourie…
Thermal boundary conductance in standalone and non-standalone GaN/AlN heterostructures predicted using machine learning interatomic potentials
Hao Zhou, Khalid Zobaid Adnan, Wyatt Allen Jones +1
GaN/AlN interfaces are essential in advanced high-power and high-frequency electronic devices, where effective thermal management is crucial for optimal performance and reliability…
Thermal boundary conductance and thermal conductivity strongly depend on nearby environment
Khalid Zobaid Adnan, Tianli Feng
At the nanoscale, the thermal boundary conductance (TBC) and thermal conductivity are not intrinsic properties of interfaces or materials but depend on the nearby environment. Howe…