404 citations · 2.9k across the 40 of their papers we have counts for
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cond-mat.mtrl-sci2019★ 4 cited
Band bending profile and band offset extraction at semiconductor-metal interfaces
Sergej Schuwalow, Niels B. M. Schroeter, Jan Gukelberger +11
The band alignment of semiconductor-metal interfaces plays a vital role in modern electronics, but remains difficult to predict theoretically and measure experimentally. For interf…
cond-mat.mtrl-sci2017★ 7 cited
Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices
E. Bussmann, John King Gamble, J. C. Koepke +9
As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of…