collaborators

1 paper

cond-mat.mtrl-sci2024

Origin of Interstitial Doping Induced Coercive Field Reduction in Ferroelectric Hafnia

Tianyuan Zhu, Liyang Ma, Xu Duan +1

Hafnia-based ferroelectrics hold promise for nonvolatile ferroelectric memory devices. However, the high coercive field required for polarization switching remains a prime obstacle…