226 citations · 684 across the 6 of their papers we have counts for
6 papers
A Process-Aware Hybrid Si/IGO Monolithic-3D 6T SRAM with BEOL Pass-Gates for the 2nm Node
Po-Chuan Wang, Dongwon Jang, Eknath Sarkar +5
We propose a monolithic-3D (M3D) 6T SRAM at the 2nm node, integrating BEOL IGO pass-gates (PGs) with an all-silicon nanosheet latch, buried power rails (BPRs), and Ru interconnects…
Significant enhancement of hole mobility in [110] silicon nanowires compared to electrons and bulk silicon
A. K. Buin, A. Verma, A. Svizhenko +1
Utilizing sp3d5s* tight-binding band structure and wave functions for electrons and holes we show that acoustic phonon limited hole mobility in [110] grown silicon nanowires (SiNWs…
Effect of scattering and contacts on current and electrostatics in carbon nanotubes
A. Svizhenko, M. P. Anantram
We computationally study the electrostatic potential profile and current carrying capacity of carbon nanotubes as a function of length and diameter. Our study is based on solving t…
Analysis of band-gap formation in squashed arm-chair CNT
H. Mehrez, A. Svizhenko, M. P. Anantram +2
The electronic properties of squashed arm-chair carbon nanotubes are modeled using constraint free density functional tight binding molecular dynamics simulations. Independent from…
Role of scattering in nanotransistors
Alexei Svizhenko, M. P. Anantram
We model the influence of scattering along the channel and extension regions of dual gate nanotransistor. It is found that the reduction in drain current due to scattering in the r…
Electronic transport through carbon nanotubes -- effects of structural deformation and tube chirality
Amitesh Maiti, Alexei Svizhenko, M. P. Anantram
Atomistic simulations using a combination of classical forcefield and Density-Functional-Theory (DFT) show that carbon atoms remain essentially sp2 coordinated in either bent tubes…