16 citations · 17 across the 3 of their papers we have counts for
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Site-selective enhancement of Eu emission in delta-doped GaN
Amelia R. Klein, Hayley J. Austin, Fumikazu Murakami +7
Europium-doped gallium nitride (GaN:Eu) is a promising platform for classical and quantum optoelectronic applications. When grown using organometallic vapor-phase epitaxy, the domi…
Investigation of electron beam induced migration of hydrogen in Mg-doped GaN using Eu as a probe
Brandon Mitchell, Donghwa Lee, Dong-gun Lee +3
We demonstrate the use of hydrogen induced changes in the emission of isoelectric Eu ions, in Mg-doped p-type GaN, as a powerful probe to study the dynamics of hydrogen movement un…
Threshold fields for antiparallel ferroelectric domain wall motion
Samrat Choudhury, Yulan Li, Nozomi Odagawa +10
While an ideal antiparallel ferroelectric wall is considered a unit cell in width (~0.5nm), we show using phase field modeling that the threshold field for moving this wall dramati…