activity
20072011
most citedEffects of Ga+ milling on InGaAsP Quantum Well Laser with mirrors etched by Focused Ion Beam

18 citations · 22 across the 5 of their papers we have counts for

collaborators

5 papers

physics.optics2011★ 1 cited

Highly luminescent a-SiOx<Er>/SiO2/Si multilayer structure

Rossano Lang, David S. L. Figueira, Felipe Vallini +1

We have fabricated highly-luminescent samples with erbium-doped amorphous silicon sub-oxide (a-SiOx<Er>) layers on SiO2/Si substrates. The layers are designed to provide a resonanc…

physics.optics2009★ 3 cited

Resonant structures based on amorphous silicon sub-oxide doped with Er3+ with silicon nanoclusters for an efficient emission at 1550 nm

D. S. L. Figueira, D. Mustafa, L. R. Tessler +1

We present a resonant approach to enhance 1550nm emission efficiency of amorphous silicon sub-oxide doped with Er3+ (a-SiOx<Er>) layers with silicon nanoclusters (Si-NC). Two disti…

physics.optics2009★ 18 cited

Effects of Ga+ milling on InGaAsP Quantum Well Laser with mirrors etched by Focused Ion Beam

F. Vallini, D. S. L Figueira, P. F. Jarschel +4

InGaAsP/InP quantum wells (QW) ridge waveguide lasers were fabricated for the evaluation of Ga+ Focused Ion Beam (FIB) milling of mirrors. Electrical and optical proprieties were i…

physics.optics2008

Impact of Si nanocrystals in a-SiOx<Er> in C-Band emission for applications in resonators structures

D. S. L Figueira, D. Mustafa, L. R. Tessler +1

Si nanocrystals (Si-NC) in a-SiOx<Er> were created by high temperature annealing. Si-NC samples have large emission in a broadband region, 700nm to 1000nm. Annealing temperature, a…

physics.optics2007

Rare-earth Doped Amorphous Silicon Microdisk and Microstadium Resonators with Emission at 1550nm

D. S. L. Figueira, N. C. Frateschi

Microdisks and microstadium resonators were fabricated on erbium doped amorphous hydrogenated silicon (a-Si:H<Er>) layers sandwiched in air and native SiO2 on Si substrates. Anneal…