8 papers
Anion Doping Driven Non-Ferroelectric-to-Ferroelectric Phase Transition in Epitaxial Y:HfO2
Soumyajyoti Mondal, Binoy Krishna De, Asraful Haque +10
Oxygen vacancies are often essential for stabilizing the orthorhombic ferroelectric phase in HfO2, with cationic doping widely employed to introduce such defects. In contrast, syst…
Room-Temperature Electric-Field Control of Anomalous Hall Effect in Py/BTO/LSMO Heterostructures
Kusampal Yadav, Kousik Das, Aditya Raj +7
We demonstrate room temperature electric field control of the anomalous Hall effect in epitaxial Ni80Fe20 (Py) BaTiO3 (BTO) La0.7Sr0.3MnO3 (LSMO) thin film heterostructures grown o…
Large Pyroelectric Enhancement in Freestanding Epitaxial BaTiO3 Membranes on Si
Ajay Kumar, Asraful Haque, Shubham Kumar Parate +5
Ferroelectric membranes transferred onto arbitrary substrates provide reduced mechanical clamping at the interfaces that can diminish the effective polarization-rotation barrier of…
Interfacial and bulk switching MoS2 memristors for an all-2D reservoir computing framework
Asmita S. Thool, Sourodeep Roy, Prahalad Kanti Barman +5
In this study, we design a reservoir computing (RC) network by exploiting short- and long-term memory dynamics in Au/Ti/MoS/Au memristive devices. The temporal dynamics is engi…
Field-induced reversible phase transition and negative differential resistance in In2Se3 ferroelectric semiconducting FETs
Jishnu Ghosh, Shubham Parate, Arup Basak +6
Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlay…
Synchronous polarization switching at sub-coercive fields through stochastic resonance in ferroelectric thin-film capacitors
Vivek Dey, Thejas Basavarajappa, Manikantan R. S. +4
Stochastic resonance (SR) is a phenomenon by which the presence of noise in a non-linear system allows for detection of a weak sub-threshold signal, or in a bi-stable system allows…