First Demonstration of HZO/beta-Ga2O3 Ferroelectric FinFET with Improved Memory Window

Seohyeon Park, Jaewook Yoo, Hyeojun Song +8

We have experimentally demonstrated the effectiveness of beta-gallium oxide (beta-Ga2O3) ferroelectric fin field-effect transistors (Fe-FinFETs) for the first time. Atomic layer de…