6 papers · 1 filter
Anion Doping Driven Non-Ferroelectric-to-Ferroelectric Phase Transition in Epitaxial Y:HfO2
Soumyajyoti Mondal, Binoy Krishna De, Asraful Haque +10
Oxygen vacancies are often essential for stabilizing the orthorhombic ferroelectric phase in HfO2, with cationic doping widely employed to introduce such defects. In contrast, syst…
Large Pyroelectric Enhancement in Freestanding Epitaxial BaTiO3 Membranes on Si
Ajay Kumar, Asraful Haque, Shubham Kumar Parate +5
Ferroelectric membranes transferred onto arbitrary substrates provide reduced mechanical clamping at the interfaces that can diminish the effective polarization-rotation barrier of…
Field-induced reversible phase transition and negative differential resistance in In2Se3 ferroelectric semiconducting FETs
Jishnu Ghosh, Shubham Parate, Arup Basak +6
Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlay…
Epitaxial growth and stabilization of perovskite phase EuNiO3 thin films through RF sputtering
Prashanth S, Binoy Krishna De, Shubham Kumar Parate +2
Phase change materials (PCMs) that exhibit volatile resistive switching are promising for emulating neuronal oscillators. Charge transfer insulators, such as ReNiO3 (where Re repre…
Wavelength-dependent anisotropic light-matter interaction in 2D ferroelectric In2Se3
Divya Jangra, Binoy Krishna De, Pragati Sharma +8
The anisotropic light-matter interactions in 2D materials have garnered significant attention for their potential to develop futuristic polarization-based optoelectronic devices, s…
Room temperature Mott transistor based on resistive switching in disordered V2O3 films grown on Si
Binoy Krishna De, V. G. Sathe, Divya +5
Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often…