3 papers
cond-mat.str-el2024
A topological material in the III-V family: heteroepitaxial InBi on InAs
Laurent Nicolaï, Ján Minár, Maria Christine Richter +15
InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, cl…
cond-mat.mes-hall2024
Giant asymmetric proximity-induced spin-orbit coupling in twisted graphene/SnTe heterostructure
Marko MilivojeviÄ, Martin Gmitra, Marcin Kurpas +2
We analyze the spin-orbit coupling effects in a three-degree twisted bilayer heterostructure made of graphene and an in-plane ferroelectric SnTe, with the goal of transferring the…
cond-mat.mes-hall2024
Tuning proximity spin-orbit coupling in graphene/NbSe heterostructures via twist angle
Thomas Naimer, Martin Gmitra, Jaroslav Fabian
We investigate the effect of the twist angle on the proximity spin-orbit coupling (SOC) in graphene/NbSe heterostructures from first principles. The low-energy Dirac bands of s…