collaborators

1 paper

cond-mat.str-el2024

A topological material in the III-V family: heteroepitaxial InBi on InAs

Laurent Nicolaï, Ján Minár, Maria Christine Richter +15

InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, cl…