321 citations · 2.5k across the 65 of their papers we have counts for
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Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method
Imad Limame, Ching-Wen Shih, Alexej Koltchanov +8
We report on the epitaxial growth, theoretical modeling, and structural as well as optical investigation of multi-layer, site-controlled quantum dots fabricated using the buried st…
Intermediate Field Coupling of Single Epitaxial Quantum Dots to Plasmonic Waveguides
Michael Seidel, Yuhui Yang, Thorsten Schumacher +6
Key requirements for quantum plasmonic nanocircuits are reliable single-photon sources, high coupling efficiency to the plasmonic structures and low propagation losses. Self-assemb…
High- lasing in photonic-defect semiconductor-dielectric hybrid microresonators with embedded InGaAs quantum dots
Kartik Gaur, Ching-Wen Shih, Imad Limame +6
We report an easy-to-fabricate microcavity design to produce optically pumped high- quantum dot microlasers. Our cavity concept is based on a buried photonic-defect for tight la…
Assessing the alignment accuracy of state-of-the-art deterministic fabrication methods for single quantum dot devices
Abdulmalik A. Madigawa, Jan N. Donges, Benedek Gaál +13
The realization of efficient quantum light sources relies on the integration of self-assembled quantum dots (QDs) into photonic nanostructures with high spatial positioning accurac…
Applying a Riesz-projection-based contour integral eigenvalue solver to compute resonance modes of a VCSEL
Lilli Kuen, Fridtjof Betz, Felix Binkowski +6
We investigate the calculation of resonance modes of a VCSEL with a Riesz projection eigenvalue solver. The eigenvalue solver is based on the principle of contour integration where…
Optical characteristics of cavity structures with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and In0.37Ga0.63As quantum dots as the active region
Bartosz Kamiński, Agata Zielińska, Anna Musiał +5
We characterized optically In0.37Ga0.63As/GaAs quantum dots and Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflector based cavities. The main mechanisms of quantum dots photolumin…