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physics.app-ph2018
Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers
Kosuke Takiguchi, Le Duc Anh, Takahiro Chiba +3
The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance (MR), such as giant magnetoresistance (GMR) and tunnelling magnetor…
physics.app-ph2018
Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor
Toshiki Kanaki, Hiroki Yamasaki, Tomohiro Koyama +3
A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor…