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A. É. Atamuratov

3 papers here

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author3

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • physics.app-ph2
  • cond-mat.mes-hall1
ORCID 0000-0003-2173-3783

identity via Semantic Scholar / OpenAlex

most citedSelf-heating effect in nanoscale SOI Junctionless FinFET with different geometries

8 citations · 8 across the 3 of their papers we have counts for

collaborators

3 papers

physics.app-ph2024★ 8 cited

Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

A. E. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

In this work we study the self-heating (1) effect (SHE) in nanoscale Silicon on Insulator Junctionless (SOI JL) FinFET transistor with fi cross section in rectangular, trapeze and…

cond-mat.mes-hall2024

Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

Atabek E. Atamuratov, Mahkam M. Khalilloev, Ahmed Yusupov +2

The influence of the channel shape in a junctionless silicon-on-insulator finned field-effect transistor (JL SOI FinFET) on the amplitude of random telegraph noise (RTN) induced by…

physics.app-ph2024

Comparative study of the self-heating effect in the accumulation and inversion mode FinFETs

A. E. Atamuratov, B. O. Jabbarova, E. Sh. Xaitbayev +2

In this work, the self-heating effect in inversion mode FinFET and Junctionless (accumulation mode) FinFET is compared and the influence of the different electrical and geometric p…

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