2 papers
cond-mat.mes-hall2024
Symmetric n-and p-Type Sub-5-nm 1D Graphene Nanoribbon Transistors for Homogeneous CMOS Applications
Linqiang Xu, Shiqi Liu, Qiuhui Li +6
Graphene nanoribbon (GNR) emerges as an exceptionally promising channel candidate due to its tunable sizable bandgap (0-3 eV), ultrahigh carrier mobility (up to 4600 cm^(2) V^(-1)…
physics.comp-ph2024
Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors
Ying Li, Yang Shen, Linqiang Xu +7
Sub-1-nm gate length transistors have been experimentally fabricated, but their device performance limit remains elusive. Herein, we explore the performance limits of the s…