Orientation-dependent surface radiation damage in ${\hat{I}}^2$-Ga2O3 explored by multiscale atomic simulations

Taiqiao Liu, Zeyuan Li, Junlei Zhao +7

Ultrawide bandgap semiconductor ${\hat{I}}^2$-Ga2O3 holds extensive potential for applications in high-radiation environments. One of the primary challenges in its practical application is…