Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al${}_{0.33}$Ga${}_{0.67}$As heterostructure

C. P. Dobney, A. Nasir, P. See +5

We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al${}_{0.33}$Ga${}_{0.67}$As heterostructure. A section of the n-type material has been converted…