13 citations · 22 across the 6 of their papers we have counts for
Showing 2008 · cond-mat.mtrl-sciShow all
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cond-mat.mtrl-sci2008
A complete Raman mapping of phase transitions in Si under indentation
C. R. Das, H. C. Hsu, S. Dhara +7
Crystalline Si substrates are studied for pressure induced phase transformation under indentation at room temperature using Berkovich tip. Raman scattering study is used for the id…
cond-mat.mtrl-sci2008★ 8 cited
Mechanism of recrystallization process in epitaxial GaN under dynamic stress field - Atomistic origin of planar defect formation
C. R. Das, S. Dhara, H. C. Hsu +6
The mechanism of recrystallization in epitaxial (1000) GaN film, introduced by indentation technique, is probed by lattice dynamic studies using Raman spectroscopy. The recrystalli…
cond-mat.mtrl-sci2008★ 13 cited
Recrystallization of epitaxial GaN under indentation
S. Dhara, C. R. Das, H. C. Hsu +6
We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation.Hardness value is measured close to 10 GPa, using a Berkovich indenter. Pop-in burst in the loading…