activity
20042008
most citedMulti-phonon Raman scattering in GaN nanowires

50 citations · 226 across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.mtrl-sci2008

A complete Raman mapping of phase transitions in Si under indentation

C. R. Das, H. C. Hsu, S. Dhara +7

Crystalline Si substrates are studied for pressure induced phase transformation under indentation at room temperature using Berkovich tip. Raman scattering study is used for the id…

cond-mat.mtrl-sci2008★ 39 cited

Surface optical Raman modes in InN nanostructures

Satyaprakash Sahoo, M. S. Hu, C. W. Hsu +5

Raman spectroscopic investigations are carried out on one-dimensional nanostructures of InN,such as nanowires and nanobelts synthesized by chemical vapor deposition. In addition to…

cond-mat.mtrl-sci2008★ 13 cited

Recrystallization of epitaxial GaN under indentation

S. Dhara, C. R. Das, H. C. Hsu +6

We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation.Hardness value is measured close to 10 GPa, using a Berkovich indenter. Pop-in burst in the loading…

physics.optics2007

Deformation potential dominated phonons in ZnS quantum dots

S. Dhara, A. K. Arora, Jay Ghatak +5

Strong deformation potential (DP) dominated Raman spectra are reported for quantum confined cubic ZnS nanoclusters under off-resonance conditions allowed only in quantum dots. A fl…

cond-mat.mtrl-sci2007★ 50 cited

Multi-phonon Raman scattering in GaN nanowires

S. Dhara, Sharat Chandra, G. Mangamma +9

UV Raman scattering studies show longitudinal optical (LO) mode up to 4th order in wurtzite GaN nanowire system. Frohlich interaction of electron with the long range electrostatic…

cond-mat.mtrl-sci2007★ 6 cited

Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature

S. Dhara, P. Magudapathy, R. Kesavamoorthy +8

InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallog…