3 papers
cond-mat.mtrl-sci2024
Effect of Top AlO Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/AlO/HfZrO/SiO/Si (MIFIS) Gate Structure
Tao Hu, Xinpei Jia, Runhao Han +17
We investigate the effect of top Al2O3 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistors (Si-FeFETs) with TiN/AlO/Hf$_{0.5…
cond-mat.mtrl-sci2024
Impact of the Top SiO2 Interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure
Tao Hu, Xianzhou Shao, Mingkai Bai +13
We study the impact of top SiO2 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistor (FeFET) with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS…
physics.app-ph2024
Impact of Top SiO2 interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure
Tao Hu, Xianzhou Shao, Mingkai Bai +13
We study the impact of top SiO2 interlayer thickness on memory window of Si channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) gate structure. The memory window increases wit…