3 papers
cond-mat.mes-hall2024
A group-IV double heterostructure light emitting diode for room temperature gain in Silicon
Andreas Salomon, Johannes Aberl, Lada VukuÅ¡iÄ +8
The lack of straightforward epitaxial integration of useful telecom lasers on silicon remains the major bottleneck for bringing optical interconnect technology down to the on-chip…
cond-mat.mes-hall2024
Telecom light-emitting diodes based on nanoconfined self-assembled silicon-based color centers
Andreas Salomon, Johannes Aberl, Enrique Prado Navarrete +4
Silicon color centers (SiCCs) have recently emerged as potential building blocks for light emitters in Si photonics, quantum emitters with spin storage capabilities, and Si-based q…
cond-mat.mes-hall2024
All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy
Johannes Aberl, Enrique Prado Navarrete, Merve Karaman +12
Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC…