collaborators

1 paper

cond-mat.mtrl-sci2024

Precise structure and polarization determination of Hf0.5Zr0.5O2 with electron ptychography

Xiaoyue Gao1, Zhuohui Liu, Bo Han +8

Hf0.5Zr0.5O2 (HZO) is a promising candidate for next generation ferroelectric memories and transistors. However, its ferroelectricity origin is still under debate due to the comple…