A. Bhattacharyya

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physics.app-ph2024

NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination

Yizheng Liu, Saurav Roy, Carl Peterson +2

This work reports the fabrication and characterization of a NiOx/\b{eta}-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactiv…

physics.app-ph2024

Record-High Electron Mobility and Controlled Low 10 $^{15}$ cm $^{- 3}$ Si-doping in (010) $I^^{2}$ -Ga $_{2}$ O $_{3}$ Epitaxial Drift Layers

Carl Peterson, Arkka Bhattacharyya, Kittamet Chanchaiworawit +7

We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 $I^¼$ m thick $I^^{2}$ -Ga $_{2}$ O $_{3}$ films with electron concentrations in the 10 $^{15}$ cm$…

NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination

Record-High Electron Mobility and Controlled Low 1015 cm−3 Si-doping in (010) I^2-Ga2​O3​ Epitaxial Drift Layers

Record-High Electron Mobility and Controlled Low 10 $^{15}$ cm $^{- 3}$ Si-doping in (010) $I^^{2}$ -Ga $_{2}$ O $_{3}$ Epitaxial Drift Layers