22 citations · 40 across the 12 of their papers we have counts for
7 papers · 1 filter
Crystallography of periodic nanotextures in a strained Mott insulator
Benjamin Z. Gregory, Yorick A. Birkhölzer, Noah Schnitzer +9
Here we investigate stripes of alternating structural phases spontaneously forming in epitaxially strained thin films below the metal-insulator transition. Using large-…
Martensitic laminate geometry controls electronic phase transitions in a Mott insulator
Ziming Shao, Benjamin Gregory, Suchismita Sarker +4
Symmetry-lowering structural phase transitions result in multiple degenerate structures whose coexistence is determined by macroscopic strain compatibility. In quantum materials, t…
Synthesis of epitaxial TaO thin films on AlO by suboxide molecular-beam epitaxy and thermal laser epitaxy
Yorick A. Birkhölzer, Anna S. Park, Noah Schnitzer +28
Tantalum dioxide (TaO2) is a metastable tantalum compound. Here, we report the epitaxial stabilization of TaO2 on Al2O3 (1-102) (r-plane sapphire) substrates using suboxide molecul…
Resonant diffraction and photoemission inconsistent with altermagnetism in epitaxial RuO films
Benjamin Z. Gregory, Neha Wadehra, Shuyuan Zhang +15
Excitement about the magnetic and electronic properties of RuO is growing, fueled by reports of antiferromagnetism, strain-induced superconductivity, and its recent classificat…
Picosecond expansion in LaAlO3 resonantly driven by infrared-active phonons
Jakob Gollwitzer, Jeffrey Z. Kaaret, Y. Eren Suyolcu +19
We investigate the ultrafast structural dynamics of LaAlO3 thin films driven by short mid-infrared laser pulses at 20 THz. Time-resolved X-ray diffraction reveals an immediate latt…
X-ray Nano-imaging of a Heterogeneous Structural Phase Transition in V2O3
Ziming Shao, Aileen Luo, Eti Barazani +5
Controlling the Mott transition through strain engineering is crucial for advancing the development and application of memristive and neuromorphic computing devices. Yet, Mott insu…
Spontaneous supercrystal formation during a strain-engineered metal-insulator transition
O. Yu. Gorobtsov, L. Miao, Z. Shao +13
Mott metal-insulator transitions possess electronic, magnetic, and structural degrees of freedom promising next generation energy-efficient electronics. We report a previously unkn…