activity
20062008
most citedCharacterization of high-temperature PbTe p-n junctions prepared by thermal diffusion and by ion-implantation

13 citations · 27 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.other2008

Experimental and Theoretical Investigation of the Barrier Pyroelectric Effect in a Quantum Paraelectric Semiconductor

A. V. Butenko, V. Sandomirsky, R. Kahatabi +4

We describe here the first comprehensive investigation of a pyroelectric response of a p-n junction in a non-polar paraelectric semiconductor. The pyroelectric effect is generated…

cond-mat.other2007

Pyroelectric Effect Induced by the Built-in Field in the p-n Junction of the Quantum Paraelectric PbTe: Experimental Study

A. V. Butenko, V. Sandomirsky, R. Kahatabi +3

We report here the first observation of a pyroelectric effect in a non-polar semiconductor. This effect originates in the temperature dependent electric dipole of the p-n junction.…

cond-mat.other2007★ 12 cited

High-temperature PbTe diodes

Z. Dashevsky, V. Kasiyan, E. Mogilko +5

We describe the preparation of high-temperature PbTe diodes. Satisfactory rectification was observed up to 180-200 K. Two types of diodes, based on a p-PbTe single crystal, were pr…

cond-mat.other2007★ 13 cited

Characterization of high-temperature PbTe p-n junctions prepared by thermal diffusion and by ion-implantation

A. V. Butenko, R. Kahatabi, E. Mogilko +6

We describe here the characteristics of two types of high-quality PbTe p-n-junctions, prepared in this work: (1) by thermal diffusion of In4Te3 gas (TDJ), and (2) by ion implantati…

cond-mat.other2006★ 2 cited

Electric Field Effect Analysis of Thin PbTe films on high-epsilon SrTiO3 Substrate

A. V. Butenko, R. Kahatabi, V. Sandomirsky +3

Thin PbTe films (thickness 500 - 600 angstrom), deposited on SrTiO3, have been investigated by electric field effect (EFE). The high resistivity of such thin films warrants a high…