5 papers
Valley-Landscape Engineering in Bilayer WSe Gate-All-Around Transistors
Katsunori Wakabayashi, Souren Adhikary, Kazuhito Tsukagoshi
The K- valence-band splitting that governs hole transport in few-layer WSe is not a fixed material constant. It is tuned by interlayer stacking, strain, pressure, a…
Transconductance as a Probe of Valley Thermodynamics in Multilayer WSe
Katsunori Wakabayashi, Souren Adhikary, Tomoaki Kameda
Transconductance is a central figure of merit in field-effect transistors, typically governed by charge accumulation and carrier mobility. In multilayer WSe transistors, howeve…
Dilute Magnetism and Edge-State Engineering in Monolayer SnO
Yuya Fukuta, Souren Adhikary, Kazuhito Tsukagoshi +1
Tin monoxide (SnO) is a p-type oxide semiconductor whose electronic properties can be widely modified via atomic-scale engineering. Using density functional theory, we investigate…
Strain Effects on Electronic Properties of Cobalt-Based Coordination Nanosheets
Kento Nishigomi, Yu Yi, Souren Adhikary +2
We theoretically study the strain effects on the electronic properties of cobalt-based benzenehexathiol (CoBHT) coordination nanosheets using first-principles calculations. Two dis…
Optically induced spin Hall current in monolayer Janus NbSSe: A first-principles study
Souren Adhikary, Tomoaki Kameda, Katsunori Wakabayashi
Monolayer Janus transition-metal dichalcogenides possess Ising- and Rashba-type spin-orbit-couplings (SOC), leading to intriguing spin splitting effects at K and K, and around $…