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Oxygen vacancy driven mobility enhancement in epitaxial La-doped BaSnO3 from vacuum annealing
Hai Jun Cho, Takaki Onozato, Mian Wei +2
Wide bandgap (~3.1 eV) La-doped BaSnO3 (LBSO) has attracted increasing attention as one of the transparent oxide semiconductors since its bulk single crystal shows a high carrier m…
Buffer layer-less fabrication of high-mobility transparent oxide semiconductor, La-doped BaSnO3
Anup V. Sanchela, Mian Wei, Joonhyuk Lee +6
Transparent oxide semiconductors (TOSs) showing both high visible transparency and high electron mobility have attracted great attention towards the realization of advanced optoele…
Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3
Anup V. Sanchela, Mian Wei, Haruki Zensyo +6
We report herein that the carrier mobility of the 2%-La-doped BaSnO3 (LBSO) films on (001) SrTiO3 and (001) MgO substrates strongly depends on the thickness whereas it is unrelated…