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cond-mat.mes-hall2008
Photogalvanic effects due to quantum interference in optical transitions demonstrated by terahertz radiation absorption in Si-MOSFETs
P. Olbrich, S. A. Tarasenko, C. Reitmaier +4
We report on the observation of the circular (helicity-dependent) and linear photogalvanic effects in Si-MOSFETs with inversion channels. The developed microscopic theory demonstra…
cond-mat.mes-hall2008★ 82 cited
Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures
W. Weber, L. E. Golub, S. N. Danilov +10
Photogalvanic effects are observed and investigated in wurtzite (0001)-oriented GaN/AlGaN low-dimensional structures excited by terahertz radiation. The structures are shown to rep…