3 citations · 5 across the 5 of their papers we have counts for
5 papers
Dielectric function of (ZnxCd1-x)3P2 alloy system in the region of direct optical transitions
D. M. Stepanchikov, S. V. Shutov
The band structure of (ZnxCd1-x)3P2 alloy system is considered within the framework of Kildal's band model. Frequency dependencies of real and imaginary parts of dielectric functio…
Radiative recombination through EL2 centers in gallium arsenide single crystals doped by selenium and cadmium
M. B. Litvinova, S. V. Shutov, A. D. Shtan'ko +1
Influence of Cd and Se atoms on the quantum efficiency of photon emission through EL2 defects in gallium arsenide single crystals has been investigated. A comparative technique of…
Near band-edge luminescence of semi-insulating undoped gallium arsenide at high levels of excitation
V. F. Kovalenko, S. V. Shutov, Ye. A. Baganov +1
The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped GaAs crystals at 77K on the concentration of background acceptor im…
Simulation of Growth of Graded Bandgap Solid Solutions of GaAsxP1-x at Liquid Phase Electroepitaxy
V. V. Tsybulenko, Ye. A. Baganov, V. A. Krasnov +1
The possibility of the composition control of the GaAs1-xPx solid solution on the GaAs substrate at liquid phase electroepitaxy from the Ga-As-P solution-melt is theoretically cons…
Investigations of thermometric characteristics of p+-n - type GaP diodes
V. A. Krasnov, Yu. M. Shwarts, M. M. Shwarts +5
The technique of obtaining of p+-n-type gallium phosphide diode epitaxial structures from liquid phase was developed as well as pilot samples of diode temperature sensors were fabr…