Current manipulation of Giant tunneling altermagnetic resistance in collinear Antiferromagnetic RuO2/MgO/RuO2 sandwich structure

Shijie Xu, Yan Huang, Farzad Mahfouzi +15

As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consu…