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quant-ph2026
Spin-active chlorine-related centers in 4H-SiC with telecom-band emissions
Danial Shafizadeh, Misagh Ghezellou, Viktor M. Bobal +5
A photoluminescence (PL) and magnetic resonance investigation of a defect in chlorine-implanted 4H-SiC is presented. This Cl-related center emits light at telecom wavelengths with…
quant-ph2025
Comparative study of divacancies in 3C-, 4H- and 6H-SiC
Danial Shafizade, Joel Davidsson, Takeshi Ohshima +2
The divacancy comprising two neighboring vacant sites in the SiC lattice is a promising defect for applications in quantum technology. So far, most work is concerned with the divac…
quant-ph2023
Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC
Danial Shafizadeh, Joel Davidsson, Takeshi Ohshima +3
In this study, we address the selection rules with respect to the polarization of the optical excitation of two colour centres in 4H-SiC and 6H-SiC with potential for applications…