11 citations · 22 across the 5 of their papers we have counts for
5 papers · 1 filter
Spin-active chlorine-related centers in 4H-SiC with telecom-band emissions
Danial Shafizadeh, Misagh Ghezellou, Viktor M. Bobal +5
A photoluminescence (PL) and magnetic resonance investigation of a defect in chlorine-implanted 4H-SiC is presented. This Cl-related center emits light at telecom wavelengths with…
Comparative study of divacancies in 3C-, 4H- and 6H-SiC
Danial Shafizade, Joel Davidsson, Takeshi Ohshima +2
The divacancy comprising two neighboring vacant sites in the SiC lattice is a promising defect for applications in quantum technology. So far, most work is concerned with the divac…
Quantum communication networks with defects in silicon carbide
Philipp Sohr, Philipp Koller, Sebastian Ecker +23
Quantum communication promises unprecedented capabilities enabled by the transmission of quantum states of light. However, current implementations face severe distance limitations…
Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC
Danial Shafizadeh, Joel Davidsson, Takeshi Ohshima +3
In this study, we address the selection rules with respect to the polarization of the optical excitation of two colour centres in 4H-SiC and 6H-SiC with potential for applications…
Vanadium in Silicon Carbide: Telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions
T. Astner, P. Koller, C. M. Gilardoni +6
Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, sever…