1 citations · 2 across the 18 of their papers we have counts for
8 papers · 2 filters
In situ XRD Study of Strain Evolution in AlGaN/GaN HEMT at High Temperatures up to 1000 °C
Botong Li, Bobby G. Duersch, Hunter Ellis +6
The thermal stability and structural evolution of a GaN high-electron-mobility transistor (HEMT) heterostructure grown on a Si (111) substrate were investigated using in situ high-…
In situ Study of p-NiO Film Quality at High Temperatures up to 1100 deg C
Hunter Ellis, Bobby G. Duersch, Botong Li +4
NiO is a promising p-type material for photovoltaics and power electronics, but its temperature limits remain unclear. Using in situ high-temperature X-ray diffraction (HT-XRD) fro…
Control of Extraordinary Optical Transmission in Resonant Terahertz Gratings via Lateral Depletion in an AlGaN-GaN Heterostructure
Geofrey Nyabere, Hunter Ellis, Miguel Gomez +7
Periodic metallic gratings on substrates can support a range of electromagnetic modes, such as leaky waveguide, guided-resonant, and Fabry-Perot (FP) cavity modes, which can strong…
High thermal conductivity of rutile-GeO films grown by MOCVD:
Imteaz Rahaman, Michael E. Liao, Ziqi Wang +10
Rutile germanium dioxide (r-GeO2) has recently emerged as a promising ultrawide-bandgap (UWBG) semiconductor owing to its wide bandgap (~4.4-5.1 eV), ambipolar doping potential, an…
Study of Optical Properties of MOCVD-Grown Rutile GeO2 Films
Imteaz Rahaman, Anthony Bolda, Botong Li +2
Rutile germanium dioxide (r-GeO) is a promising ultra-wide bandgap (UWBG) semiconductor, offering a high theoretical Baliga figure of merit, potential for p-type doping, and fa…
Phase Competition and Rutile Phase Stabilization of Growing GeO2 Films by MOCVD
Imteaz Rahaman, Botong Li, Hunter D. Ellis +4
Rutile germanium dioxide (r-GeO2) is an ultra-wide bandgap semiconductor with potential for ambipolar doping, making it a promising candidate for next-generation power electronics…