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researcher

Mark Lundstrom

2 papers here

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author1
  • last author1

Across the 2 of 2 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall2
ORCID 0000-0003-1460-7973

identity via Semantic Scholar / OpenAlex

most citedTowards Multi-Scale Modeling of Carbon Nanotube Transistors

39 citations · 39 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mes-hall2004

A Quantum Mechanical Approach for the Simulation of Si/SiO2 Interface Roughness Scattering in Silicon Nanowire Transistors

Jing Wang, Eric Polizzi, Avik Ghosh +2

In this work, we present a quantum mechanical approach for the simulation of Si/SiO2 interface roughness scattering in silicon nanowire transistors (SNWTs). The simulation domain i…

cond-mat.mes-hall2003★ 39 cited

Towards Multi-Scale Modeling of Carbon Nanotube Transistors

Jing Guo, Supriyo Datta, Mark Lundstrom +1

Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.