387 citations · 1.3k across the 12 of their papers we have counts for
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Quantum enhanced electric field mapping within semiconductor devices
D. Scheller, F. Hrunski, J. H. Schwarberg +7
Semiconductor components based on silicon carbide (SiC) are a key component for high-power electronics. Their behavior is determined by the interplay of charges and electric fields…
Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide
Naoya Morioka, Di Liu, Öney O. Soykal +8
Color centers in silicon carbide are emerging candidates for distributed spin-based quantum applications due to the scalability of host materials and the demonstration of integrati…
High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
Roland Nagy, Matthias Niethammer, Matthias Widmann +14
Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. He…
Quantum properties of dichroic silicon vacancies in silicon carbide
Roland Nagy, Matthias Widmann, Matthias Niethammer +12
The controlled generation and manipulation of atom-like defects in solids has a wide range of applications in quantum technology. Although various defect centres have displayed pro…