1 citations · 1 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2025
Manipulating magnetization by orbital current from a light metal Ti
Dongxing Zheng, Jingkai Xu, Fatimah Alsayafi +16
The orbital Hall effect, which does not rely on the spin-orbit coupling, has recently emerged as a promising mechanism for electrically manipulating magnetization in thin-film ferr…
cs.ET2024
A noise-tolerant, resource-saving probabilistic binary neural network implemented by the SOT-MRAM compute-in-memory system
Yu Gu, Puyang Huang, Tianhao Chen +5
We report a spin-orbit torque(SOT) magnetoresistive random-access memory(MRAM)-based probabilistic binary neural network(PBNN) for resource-saving and hardware noise-tolerant compu…
physics.app-ph2023★ 1 cited
Interfacial Resonance States-Induced Negative Tunneling Magneto-resistance in Orthogonally-Magnetized CoFeB/MgO/CoFeB
Puyang Huang, Aitian Chen, Jianting Dong +9
Magnetic tunneling junctions (MTJs) are essential for non-volatile magneto-resistive random access memory (MRAM) applications. Here, we report the observation of a large negative t…