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Thickness-Dependent Band Gap Modification in BaBiO
Rosa Luca Bouwmeester, Alexander Brinkman, Kai Sotthewes
The material BaBiO is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because BaBiO is suggested to return…
Gate-tunable band structure of the LaAlO-SrTiO interface
A. E. M. Smink, J. C. de Boer, M. P. Stehno +3
The 2-dimensional electron system at the interface between LaAlO and SrTiO has several unique properties that can be tuned by an externally applied gate voltage. In thi…
Hard x-ray photoemission and density functional theory study of the internal electric field in SrTiO3/LaAlO3 oxide heterostructures
E. Slooten, Zhicheng Zhong, H. J. A. Molegraaf +16
A combined experimental and theoretical investigation of the electronic structure of the archetypal oxide heterointerface system LaAlO3 on SrTiO3 is presented. High-resolution, har…
Josephson supercurrent through a topological insulator surface state
M. Veldhorst, M. Snelder, M. Hoek +8
Topological insulators are characterized by an insulating bulk with a finite band gap and conducting edge or surface states, where charge carriers are protected against backscatter…
Conductance anisotropy and linear magnetoresistance in La2-xSrxCuO4 thin films
M. van Zalk, A. Brinkman, H. Hilgenkamp
We have performed a detailed study of conductance anisotropy and magnetoresistance (MR) of La2-xSrxCuO4 (LSCO) thin films (0.10 < x < 0.25). These two observables are promising for…
Structure-Property Relation of SrTiO3-LaAlO3 Interfaces
M. Huijben, A. Brinkman, G. Koster +3
A large variety of transport properties have been observed at the interface between the insulating oxides SrTiO3 and LaAlO3 such as insulation, 2D interface metallicity, 3D bulk me…