Yukari Ishikawa

collaborators

8 papers

cond-mat.mtrl-sci2026

Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy

Yukari Ishikawa, Kisara Matsumoto, Kazuki Ohnishi +1

We demonstrate high-throughput three-dimensional imaging of threading dislocations in ammonothermal GaN wafers using polarized-light microscopy with collimated LED illumination. Th…

cond-mat.mtrl-sci2026

Three-dimensional visualization of lattice defects in $I^^{2}$ -Ga $_{2}$ O $_{3}$ via synchrotron-radiation Borrmann-effect X-ray topo-tomography

Yongzhao Yao, Daiki Katsube, Hirotaka Yamaguchi +4

beta-Ga2O3 is a promising material for next-generation power electronics; however, its performance is strongly affected by lattice defects such as dislocations. In this study, we d…

cond-mat.mtrl-sci2026

Determination of Burgers vectors of dislocations in monoclinic $I^^{2}$ -Ga $_{2}$ O $_{3}$ crystals by large-angle convergent-beam electron diffraction

Yoshihiro Sugawara, Yongzhao Yao, Yukari Ishikawa

We demonstrate the applicability of large-angle convergent-beam electron diffraction (LACBED) for Burgers vector determination in monoclinic $I^^{2}$ -Ga $_{2}$ O $_{3}$ . The inner product $g…

cond-mat.mtrl-sci2026

Synchrotron-radiation X-ray topography and reticulography of bulk $I^^{2}$ -Ga $_{2}$ O $_{3}$ crystals grown by the cold crucible method

Yongzhao Yao, Koki Mizuno, Kazuki Ohnishi +9

The structural properties of a $I^^{2}$ -Ga $_{2}$ O $_{3}$ single crystal grown by the oxide crystal growth from cold crucible (OCCC) method were investigated using synchrotron radiation X-ra…

cond-mat.mtrl-sci2026

Dislocations in (011)-oriented vertical Bridgman $β$ -Ga $_{2}$ O $_{3}$ substrates

Yongzhao Yao, Daiki Katsube, Hirotaka Yamaguchi +1

Dislocation in (011)-oriented $β$ -Ga $_{2}$ O $_{3}$ substrates grown by the vertical Bridgman method was investigated using X-ray topography (XRT), combined with X-ray reticulography. Tr…

cond-mat.mtrl-sci2026

High-throughput, Non-Destructive, Three-Dimensional Imaging of GaN Threading Dislocations with in-Plane Burgers Vector Component via Phase-Contrast Microscopy

Yukari Ishiakwa, Ryo Hattori, Yongzhao Yao +2

We demonstrate a nondestructive, high-throughput method for observing dislocations in GaN (0001) using phase-contrast microscopy (PCM). The PCM images (359x300 $I^¼$ m $^{2}$ ) analyzed…

Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy

Three-dimensional visualization of lattice defects in I^2-Ga2​O3​ via synchrotron-radiation Borrmann-effect X-ray topo-tomography

Determination of Burgers vectors of dislocations in monoclinic I^2-Ga2​O3​ crystals by large-angle convergent-beam electron diffraction

Synchrotron-radiation X-ray topography and reticulography of bulk I^2-Ga2​O3​ crystals grown by the cold crucible method

Dislocations in (011)-oriented vertical Bridgman β-Ga2​O3​ substrates

High-throughput, Non-Destructive, Three-Dimensional Imaging of GaN Threading Dislocations with in-Plane Burgers Vector Component via Phase-Contrast Microscopy

Three-dimensional visualization of lattice defects in $I^^{2}$ -Ga $_{2}$ O $_{3}$ via synchrotron-radiation Borrmann-effect X-ray topo-tomography

Determination of Burgers vectors of dislocations in monoclinic $I^^{2}$ -Ga $_{2}$ O $_{3}$ crystals by large-angle convergent-beam electron diffraction

Synchrotron-radiation X-ray topography and reticulography of bulk $I^^{2}$ -Ga $_{2}$ O $_{3}$ crystals grown by the cold crucible method

Dislocations in (011)-oriented vertical Bridgman $β$ -Ga $_{2}$ O $_{3}$ substrates