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researcher

Ingmar Bösing

2 papers here

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author2

Across the 2 of 2 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci1
  • physics.chem-ph1
ORCID 0000-0003-2111-5141

identity via Semantic Scholar / OpenAlex

most citedModeling of electrochemical oxide film growth -- a PDM refinement

13 citations · 22 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2023★ 13 cited

Modeling of electrochemical oxide film growth -- a PDM refinement

Ingmar Bösing, Fabio La Mantia, Jorg Thöming

The Point Defect Model (PDM) is known for over 40 years and has brought deeper insight to the understanding of passivity. During the last decades it has seen several changes and re…

physics.chem-ph2023★ 9 cited

Modeling of electrochemical oxide film growth -- impact of band-to-band tunneling

Ingmar Bösing, Jorg Thöming, Fabio La Mantia

The Point Defect Model (PDM) describes the corrosion resistance properties of oxide films based on interfacial reactions and defect transport, which are affected by the electric fi…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.