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Leakage-free electrolytes with different conductivity for non-volatile memory device utilizing insulator/metal ferromagnet transition of SrCoOx
Takayoshi Katase, Yuki Suzuki, Hiromichi Ohta
The electrochemical switching of SrCoOx-based non-volatile memory with thin-film-transistor structure was examined by using liquid-leakage-free electrolytes with different conducti…
Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate
Takayoshi Katase, Kenji Endo, Hiromichi Ohta
Infrared (IR) transmittance tunable metal-insulator conversion was demonstrated on glass substrate by using thermochromic vanadium dioxide (VO2) as the active layer in three-termin…
Current-induced effective magnetic field in a half-metallic oxide La0.67Sr0.33MnO3
Michihiko Yamanouchi, Tatsuro Oyamada, Takayoshi Katase +1
We investigated current-induced effective magnetic field Heff in half-metallic oxide La0.67Sr0.33MnO3 (LSMO) films with various thicknesses by using the planar Hall effect. Applyin…