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M. Tringides

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  • cond-mat.mtrl-sci1

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cond-mat.mtrl-sci2008

Growth mechanism for epitaxial graphene on vicinal 6H-SiC(0001) surfaces

M. Hupalo, E. Conrad, M. C. Tringides

The inability to grow large well ordered graphene with a specific number of layers on SiC(0001) is well known. The growth involves several competing processes (Si desorption, carbo…

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