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Determination of the Spacing Between Hydrogen-Intercalated Quasi-Free-Standing Monolayer Graphene and 6H-SiC(0001) Using Total-Reflection High-Energy Positron Diffraction
Matthias Dodenhöft, Izumi Mochizuki, Ken Wada +5
We have investigated the structure of hydrogen-intercalated quasi-free-standing monolayer graphene (QFMLG) grown on 6H-SiC(0001) by employing total-reflection high-energy positron…
Vertical structure of Sb-intercalated quasifreestanding graphene on SiC(0001)
You-Ron Lin, Susanne Wolff, Philip Schädlich +7
Using the normal incidence x-ray standing wave technique as well as low energy electron microscopy we have investigated the structure of quasi-freestanding monolayer graphene (QFML…
Silicon carbide stacking-order-induced doping variation in epitaxial graphene
Davood Momeni Pakdehi, Philip Schädlich, T. T. Nhung Nguyen +7
Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal SiC(0001) substra…
Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC
Mattias Kruskopf, Davood Momeni Pakdehi, Klaus Pierz +12
We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducib…
Tunable Carrier Multiplication and Cooling in Graphene
Jens C. Johannsen, Søren Ulstrup, Alberto Crepaldi +13
Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the…
Rashba splitting of 100 meV in Au-intercalated graphene on SiC
D. Marchenko, A. Varykhalov, J. Sánchez-Barriga +2
Intercalation of Au can produce giant Rashba-type spin-orbit splittings in graphene but this has not yet been achieved on a semiconductor substrate. For graphene/SiC(0001), Au inte…