3 papers
cond-mat.mtrl-sci2026
Single-Crystalline Al/Ge Heterostructure with an Atomically Sharp Commensurate Interface
Jian-Huan Wang, Ding-Ming Huang, Han Gao +3
A key challenge in developing Al/Ge heterostructures for quantum applications is Al-Ge interdiffusion. This process is facilitated by grain boundaries in polycrystalline films, whi…
cond-mat.mes-hall2025
Atomically resolved electron reflectivity at a metal/semiconductor interface
Ding-Ming Huang, Jian-Huan Wang, Jie-Yin Zhang +3
An atomically flat interface is achieved between face-centered cubic Al and diamond lattice Ge via molecular beam epitaxy (MBE). Based on the measurements of scanning tunneling mic…
cond-mat.mes-hall2025
Scalable and Tunable In-Plane Ge/Si(001) Nanowires Grown by Molecular Beam Epitaxy
Jian-Huan Wang, Ming Ming, Ding-Ming Huang +7
Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier…