A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory

Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda +6

A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO${}_4$ layer is fabricated at a low thermal budget (~375${}^{\circ }$C), enabling BEOL processes…