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researcher

Benjamin Hatanpää

2 papers here

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author2

Across the 2 of 2 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci2
ORCID 0000-0002-8441-0183
same name
  • Benjamin Hatanpää — 2 papers, h 2

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedTwo-phonon scattering in non-polar semiconductors: a first-principles study of warm electron transport in Si

10 citations · 10 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2023

Hot electron diffusion, microwave noise, and piezoresistivity in Si from first principles

Benjamin Hatanpää, Austin J. Minnich

Ab-initio calculations of charge transport properties in materials without adjustable parameters have provided microscopic insights into electron-phonon interactions which govern c…

cond-mat.mtrl-sci2022★ 10 cited

Two-phonon scattering in non-polar semiconductors: a first-principles study of warm electron transport in Si

Benjamin Hatanpää, Alexander Y. Choi, Peishi S. Cheng +1

The ab-initio theory of charge transport in semiconductors typically employs the lowest-order perturbation theory in which electrons interact with one phonon (1ph). This theory is…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.