activity
20042020
most citedTwo-dome structure in electron-doped iron arsenide superconductors

231 citations · 1.9k across the 55 of their papers we have counts for

collaborators

55 papers

cond-mat.str-el2020★ 7 cited

Magnetism driven by strong electronic correlation in the heavily carrier-doped iron oxypnictide LaFeAsOH

M. Hiraishi, K. M. Kojima, H. Okabe +7

The magnetism of the second antiferromagnetic phase (AF2) arising in the iron-based LaFeAsOH superconductor for was investigated by muon spin rotation m…

cond-mat.mtrl-sci2020★ 24 cited

Higher-Order Topological Crystalline Insulating Phase and Quantized Hinge Charge in Topological Electride Apatite

Motoaki Hirayama, Ryo Takahashi, Satoru Matsuishi +2

In higher-order topological insulators, bulk and surface electronic states are gapped, while there appear gapless hinge states protected by spatial symmetry. Here we show by ab ini…

cond-mat.mtrl-sci2019★ 24 cited

Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon

K. M. Kojima, M. Hiraishi, H. Okabe +7

We report on the local electronic structure of interstitial muon (Mu) as pseudo-hydrogen in In-Ga-Zn oxide (IGZO) semiconductor studied by muon spin rotation/relaxation (SR) exp…

cond-mat.supr-con2019★ 4 cited

Quantum dynamics of hydrogen in iron-based superconductor LaFeAsO0.9D0.1 measured with inelastic neutron spectroscopy

Jun-ichi Yamaura, Haruhiro Hiraka, Soshi Iimura +13

Inelastic neutron scattering was performed for an iron-based superconductor LaFeAsO0.9D0.1, where most of D (deuterium) replaces oxygen, while a tiny amount goes into interstitial…

cond-mat.supr-con2019

Pressure-induced quantum critical point in a heavily hydrogen-doped iron-based superconductor LaFeAsO

Masayoshi Takeuchi, Naoki Fujiwara, Takanori Kuwayama +6

An iron-based superconductor LaFeAsOH (0 0.6) undergoes two antiferromagnetic (AF) phases upon H doping. We investigated the second AF phase (=0.6) usi…

cond-mat.str-el2019★ 11 cited

Insulator-like behavior coexisting with metallic electronic structure in strained FeSe thin films grown by molecular beam epitaxy

Kota Hanzawa, Yuta Yamaguchi, Yukiko Obata +4

This paper reports that ~10-nm-thick FeSe thin films exhibit insulator-like behavior in terms of the temperature dependence of their electrical resistivity even though bulk FeSe ha…