3 papers
physics.ins-det2024
Observation of Charge Enhancement in forward-biased neutron-irradiated 4H-SiC PiN Detectors in UV-TCT Measurements
Andreas Gsponer, Philipp Gaggl, Jürgen Burin +2
Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community…
physics.acc-ph2024
The ECFA Early-Career Researchers Panel: Report for the year 2023
Julia Allen, Bruno Alves, Jan-Hendrik Arling +67
The European Committee for Future Accelerators (ECFA) Early-Career Researcher (ECR) panel, which represents the interests of the ECR community to ECFA, presents in this document it…
physics.ins-det2023
Neutron Radiation induced Effects in 4H-SiC PiN Diodes
Andreas Gsponer, Philipp Gaggl, Jürgen Maier +3
Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders…