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20072026
most citedVoltage-assisted Magnetization Switching in Ultrathin Fe80Co20 Alloy Layers

207 citations · 2.6k across the 59 of their papers we have counts for

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Showing 2011Show all

6 papers · 1 filter

cond-mat.mtrl-sci2011★ 33 cited

The effect of spin drift on spin accumulation voltages in highly-doped Si

Makoto Kameno, Eiji Shikoh, Teruya Shinjo +5

An investigation was carried out into the effect of spin drift on spin accumulation signals in highly-doped Si using non-local 4-terminal (NL-4T) and 3-terminal (NL-3T) methods. Th…

cond-mat.mtrl-sci2011★ 2 cited

Observation of weak temperature dependence of spin diffusion length in highly-doped Si by using a non-local 3-terminal method

M. Kameno, E. Shikoh, T. Oikawa +4

We conduct an experimental investigation of temperature dependence of spin diffusion length in highly-doped n-type silicon by using a non-local 3-terminal method. Whereas an effect…

cond-mat.mtrl-sci2011★ 150 cited

Graphene: Piecing it together

Mark H. Rümmeli, Claudia G. Rocha, Frank Ortmann +11

Graphene has a multitude of striking properties that make it an exceedingly attractive material for various applications, many of which will emerge over the next decade. However, o…

cond-mat.mtrl-sci2011

Experimental Investigation of Spin Transport Properties in Silicon by Using a Non-local Geometry

Masashi Shiraishi, Yoshiya Honda, Eiji Shikoh +6

A systematic investigation of spin transport properties in silicon at 8 K by using a non-local geometry is presented. The spin injection signal in the non-local scheme is found to…

cond-mat.mtrl-sci2011★ 86 cited

Molecular Spintronics

Masashi Shiraishi, Tadaaki Ikoma

Molecular spintronics is recognized to as an attractive new research direction in a field of spintronics, following to metallic spintronics and inorganic semiconductor spintronics,…

cond-mat.mtrl-sci2011★ 188 cited

Room-Temperature Electron Spin Transport in a Highly Doped Si Channel

Toshio Suzuki, Tomoyuki Sasaki, Tohru Oikawa +2

We report on the first demonstration of generating a spin current and spin transport in a highly doped Si channel at room temperature (RT) using a four-terminal lateral device with…