High-Performance and Low-Power Sub-5 nm Field-Effect Transistors Based on 7-9-7-AGNR

Hang Guo, Xian Zhang, Shuai Chen +3

Recently, an extremely-air-stable one-dimensional 7-9-7-AGNR was successfully fabricated. To further reveal its potential application in sub-5-nm field-effect transistors (FETs), t…