3 papers
cond-mat.mes-hall2025
Graphene/hBN heterostructure based Valley transistor: Dynamic Control of valley current in synchronized nonzero voltages, within the time-dependent regime
A. Belayadi, C. I. Osuala, I. Assi +3
Graphene/hexagonal boron nitride (hBN) heterostructures represent a promising class of metal-insulator-semiconductor systems widely explored for multifunctional digital device appl…
cond-mat.mes-hall2024★ 5 cited
Valley-dependent transport through graphene quantum dots due to proximity-induced, staggered spin-orbit couplings
A. Belayadi, P. Vasilopoulos, N. Sandler
We study a system composed of graphene decorated with an array of islands with C_3v symmetry that induce quantum dot (IQD) regions via proximity effects and give rise to several sp…
cond-mat.mes-hall2023
Valley-dependent tunneling through electrostatically created quantum dots in heterostructures of graphene with hexagonal boron nitride
A. Belayadi, N. A. Hadadi, P. Vasilopoulos +1
Kelvin probe force microscopy (KPFM) has been employed to probe charge carriers in a graphene/hexagonal boron nitride (hBN) heterostructure [Nano Lett, 21, 5013 (2021)]. We propose…